基于酞菁钯和C_(60)的异质结有机光敏场效应管

Heterojunction Photoresponsive Organic Field-effect Transistors Based on Palladium Phthalocyanine and C_(60)

采用酞菁钯(PdPc)和C60两种有机半导体材料,通过真空热蒸镀法以不同的沉积顺序制备了两种不同结构的平面异质结有机光敏场效应管,并对这两种结构器件的光敏特性进行比较。在波长655 nm、光强100mW/cm2的光照条件下,结构为n+-Si/SiO2/PdPc/C60/Al(S&D)(PdPc/C60-OFET)器件的最大光暗比为2×103,光响应度为3 mA/W;而结构为n+-Si/SiO2/C60/PdPc/Al(S&D)(C60/PdPc-OFET)器件的最大光暗比为3×103,光响应度为11mA/W。实验结果表明C60/PdPc-OFET可以获得更好的光敏特性。

Heterojunction photoresponsive organic field-effect transistors（PhotOFETs） based on palladium phthalocyanine（PdPc） and C60 were fabricated.PhotOFETs with the structure n＋-Si/SiO2/C60/PdPc/Al（SD）（C60/PdPc-OFET） exhibit a higher photosensitivity and photoresponsivity than that with the structure n＋-Si/SiO2/PdPc/C60/Al（SD）（PdPc/C60-OFET）.The origin for this result is the high mobility of C60 and the well-matched LUMO levels between PdPc and C60.The maximum photosensitivity and the photoresponsivity of the C60/PdPc-OFET are 3×103 and 11 mA/W while those of PdPc/C60-OFET are 2×103 and 3 mA/W under the light source with a power density of 100 mW/cm2 and emission centered at 655 nm.