摘要
用磁控溅射方法制备β-FeSi2/Si异质结，在分析其伏安特性的基础上探索其是否适合制备红外探测器，XRD、SEM分析表明，该方法能得到纯净、表面平整的β-FeSi2/Si薄膜；在室温下异质结的I—V特性具有很好的整流特性，整流效率约为Idirect／Ireverse～10^2，分流电阻约为38．4kΩ，零偏压下的电流响应率约为26μA／W。推算结果表明，该异质结的红外探测率约为1．479×10^9cm·√Hz/W，适合用于制备红外探测器。
β-FeSi2/Si heterojunction were fabricated by DC-magnetron sputtering and vacuum annealing. And the corresponding analyses of I-V characteristics infirm that the device is suitable for infrared detector. The results of x-ray diffraction （XRD） and scanning electron microscopy show that the film was pure β-FeSi2 with smooth surface. The current-voltage characteristics were measured at room temperature and the results indicate good rectifying properties about Idirect/Ireverse-10^2, shunt resistance is about 38.4kΩ,zero bias of the current response rate is about 26 μA/W. The detectivity was calculated by shunt resistance and the current response is about 1.479×10^9cm·√Hz/W, and the results indicate that the heterojunction is good candidate of infrared detector.
基金
国家自然科学基金项目（61264004）,贵州省优秀科技人才省长基金项目（黔省专合字[2011]40号）,贵州省国际合作项目（黔科合外G字[2009]700113）,贵州大学引进人才项目（贵大人基合字[2009]002号）,贵州省科技攻关项目（黔科合GY字（2011）3015）,贵州省科技创新人才团队建设专项（黔科合人才团队（2011）4002）,贵州省国际科技合作项目（黔科合外G字[2012]7004）
