基于微波散射参数分析半导体激光器的寄生效应

Characterizing parasitics based on microwave scattering parameters of laser diode

通过封装前后半导体激光器散射参数的对比,提出了一种基于微波散射参数分析半导体激光器寄生效应的方法。借助该方法对半导体激光器的寄生电阻、电容和电感对寄生效应的贡献进行分析。实验结果与理论分析结果相吻合,该方法只需测量半导体激光器的反射系数,非常简单、准确。

We propose a novel method for characterizing the parasitics of parasitic network based on the relations between the scat- tering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using the proposed method. The analysis results agree well with the experimental measurements. Furthermore, how the parasitics change with the parasitic element values is investigated. The method only requires the measurement of the reflection coefficient of laser diode, which is simple due to the developed electrical-domain measurement techniques.