电子束蒸发法制备的Eu掺杂ZnO薄膜的结构及其发光性质

Study on Structure and Photoluminescence Properties for Eu-doped ZnO Thin Films Grown by Electron Beam Evaporation

采用电子束蒸发法在蓝宝石衬底上制备了ZnO:Eu3+薄膜.通过X射线衍射仪、扫描电子显微镜和光致发光(PL)光谱仪测试了不同退火温度下薄膜结构、形貌以及光致发光谱,分析了薄膜光致发光中的能量传递原理.结果表明:ZnO:Eu粒子为六角纤锌矿结构,且600℃退火后结晶更好;光致发光谱中Eu3+的特征发光中心波长分别位于617 nm和667 nm,且600℃退火温度下的Eu3+特征发光最强.适当的退火温度可有效形成Eu离子的发光中心.

ZnO ： Eu^3＋ thin films are depositing on sapphire substrates by electron beam evaporation. The annealed at the temperature lattice structure, surface morphology and photolumineseence （PL） properties are analyzed by X - ray diffractometer （XRD） , scanning electron microscope （SEM） and PL spectrometer. The principle of energy transfer in the thin - film light - emitting is analyzed. The results showe that all the ZnO ： Eu^3＋ thin films have a hexagonal wurzite structure and better crystalline in annealed at 600℃; The characteristic emission center wavelength of Eu^3＋ are at 618 nm and 667 nm in photoluminescence spectra. The characteristic emission of Eu^3＋ is strongest at the temperature of 600 ℃. The effective preparation of rare -doped zinc oxide films by electron beam evaporation are realized.