金红石TiO_2薄膜的生长及性能研究

Growth and Characterization of Rutile TiO_2 Thin Films

采用PLD方法分别在GaN和AlGaN/GaN基片上生长金红石TiO2(200)薄膜.XRD和AFM分析结果表明:当基底温度为600°C时,在GaN基片上生长的金红石TiO2(200)衍射峰表现明显和尖锐,薄膜表面形貌均匀平整,说明在该条件下制备出TiO2薄膜具有更好的结晶度.用TEM对薄膜界面特征进一步分析观测,TiO2薄膜晶格条纹清晰,薄膜与基底的界面清晰整齐.结果表明,在GaN基底上成功生长金红石型TiO2薄膜.

In this paper, Rutile TiOz （200） thin films were fabricated on GaN and A1GaN substrates by pulsed laser deposition （PLD） method at the temperature 500℃ and 600℃. The samples were studied by X-ray diffraction （XRD）, atomic force microscopy （AFM） and transmission electron microscopy （TEM）. The XRD atlas showed that the rutile TiO2 （200） peak was sharper and the crystallinity was better at 600℃. Meanwhile, the surface morphology was smooth and uniform on GaN substrates from the AFM. The clear and complete interfaces between TiO2 and GaN by TEM and HRTEM, further clarified that high quality rutile TiO2 thin films were grown on GaN.