CVD金刚石薄膜成核机理的研究

Study on diamond thin films nucleation mechanism by CVD

利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积 实验.结果表明，在基片温度约为950 ℃，碳源浓度为1％，反应室内气体压力为4666.28 Pa 时可获得高质量金刚石薄膜.研究认为，在该实验条件下，氢原子脱附几率大，形成的碳悬 键不易倒伏，容易被碳原子替代，从而形成SP3杂化键，因而有利于提高金刚石的成核密度.

The experiment of the deposition of diamond thin films is made on silicon subs trate by using microwave plasma chemical vapor deposition(CVD) system. The resul t shows that high quality diamond thin films can be obtained when the temperatur e of the substrate is about 950 ℃, the density of carbon source is 1％, and the gas pressure in the reaction room is 4666.28 Pa. It is thought that, in the exp erimental conditions, the probability of dehydrogenation is large, the formed su spended key of carbon with strong resistance to fall tends to be replaced by car bonic atom and is changed into SP3 keys, therefore, this is helpful to increas e nucleation density of diamond.