硅及硅基半导体材料中杂质缺陷和表面的研究

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

随着超大规模集成电路设计线宽向深亚微米级(<05μm)和亚四分之一微米级(<025μm)发展,对半导体硅片及其它硅基材料的质量要求越来越高,研究上述材料中各种杂质的行为,控制缺陷类型及数量,提高晶体完整性,降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为,点缺陷及其衍生缺陷的本质与控制方法,硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅(SOI)等硅基材料的特性、制备及工艺技术发展趋势,展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

The market demands to continuously reduce the feature size and increase the integrated circuits density towards the new century. For the economical and technical considerations, the major wafer sizes are shifting to 150mm and 200mm, and the mass production of 300mm diameter wafers is expected to begin in 2001 or 2002. Consequently, on one hand, the growth and manufacturing of large diameter crystals and wafers bring about a number of technological problems and on the other hand, impurities behavior, defects and surface morphology have been the advanced research topics. The present paper has reviewed concentrations and distributions of point defects and the extended defects, and their relations with crystal growth technology. New finding of metallic impurities such as copper and iron has been particularly described. The behavior of oxygen, carbon, hydrogen and nitrogen that impact material performance in multiple ways havs been also discussed. Interaction between points defects and oxygen precipitates has been treated to be of prime importance. Microroughness, hydrophilic surface state and surface chemical bonds have been investigated in current paper by novel and improved characterization techniques. Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon on insulator(SOI) have been introduced and emphasized. Finally, the author outlooks the future scientific and engineering challenges and opportunities for silicon and silicon based materials envisioned for the sub quarter micro and nanometer integrated circuits as we approach 21st century. [