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一种用于双成像光刻中的版图分解算法

A Novel Layout Fracturing Algorithm for Double Patterning
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摘要 双成像光刻技术是在集成电路制造工艺不断缩小时解决光刻后图形失真问题和提高准确度的最有效的方案之一.在双成像光刻中,需要进行版图分解,将版图中多边形分解为更简单的图形的集合.现有的多边形分解算法不适合应用于双成像光刻,会产生工艺无法接受的薄片,覆盖误差会导致图形断开,与双成像光刻中的版图分解的目标也不同.提出了一种新的版图分解算法,通过引入交叠,消除薄片的产生,同时解决由于覆盖误差引起的图形断开问题;减少分解后的矩形数目,从而减少双成像光刻中颜色分配后的冲突总数,适合用于双成像光刻技术.实验说明该算法有效. Double patterning technology is one of the most effective solutions to settle with figure distortion and improve accuracy in photolithography when IC manufacturing technology node is downsizing rapidly. In double patterning, layout fracturing is needed to fracture polygons in layout into simpler figures. Current algorithms are not suitable for double patterning. They could produce slivers and disconnected figures due to overlay error. Their objectives are different with that of algorithm for double patterning. We propose a novel layout fracturing algorithm. It could eliminate slivers and solve disconnected figures problem with overlap introduced. It could also reduce the number of conflicts by reducing the number of rectangles after fracturing. The algorithm is suitable for double patterning technology and its effectiveness is shown in experiments.
作者 魏晗一 陆伟成
机构地区 复旦大学专用集成电路与系统国家重点实验室
出处 《复旦学报（自然科学版）》 CAS CSCD 北大核心 2013年第1期129-138,共10页 Journal of Fudan University：Natural Science
关键词 双成像光刻技术 版图分解算法 引入交叠 double patterning technology layout fracturing algorithm introduce overlap
分类号 TN47 [电子电信—微电子学与固体电子学]
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参考文献17

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复旦学报（自然科学版）
2013年 第1期

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