摘要
The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.
The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.
