多晶黑硅材料及其太阳电池应用研究

RESEARCH ON BLACK POLY-SILICON MATERIAL AND APPLICATION ON SOLAR CELLS

利用等离子体浸没离子注入技术（PⅢ）成功制备了多晶黑硅材料。通过原子力显微镜（AFM）观测分析多晶黑硅材料的表面形貌和粗糙度，黑硅材料表面呈小山峰结构，表面粗糙度约为50nm。利用紫外．可见一红外分光光度计测量黑硅的反射率，结果表明黑硅材料在300—1100nm的平均反射率为7．9％，远低于酸制绒硅片反射率。利用制备的多晶黑硅材料制备太阳电池器件，其光电转换效率可达15．88％，开路电压为605mV，短路电流密度为33．7mA／cm2。最后研究了扩散工艺对黑硅太阳电池性能的影响。

Black poly-silicon is successfully fabricated by plasma immersion ion implantation. The surface morphology and roughness of black poly-silicon were observed by atom force microscopy （AFM）. The structure on the black silicon appeared little mountain and the roughness of the surface was about 5Onto. The reflectance of black silicon was calculated by UV-VIS-IR spectrophotometer and the results showed that the reflectance of black silicon was 7.9%, which was much lower than that of acid texturing poly-silicon during the wavelength from 300nm to 1 100nm. Then the black poly-silicon was used to fabricate black solar cells. The conversion efficiency of black silicon yielded as high as 15.88% with 605mV open voltage finally the influence of diffusion conditions on the performance and 33.7mA/cm2 short circuit current density. And of black poly-silicon was investigated.