摘要
给出一款带曲率补偿的CMOS带隙基准源电路,该电路利用双极性晶体管电流增益β与温度的指数关系对带隙基准曲率进行补偿,以简单的电路结构获得低的温度系数.电路采用CSMC 0.5μm 2P3M mixed signal CMOS工艺设计,Cadence Spectre仿真结果显示,在3.6V的电源电压、-40~85℃范围内,基准源的温度系数为5.0×10-6/℃.
A curvature-compensated CMOS bandgap voltage reference (BVR) which exploited the temperature characteristics of the current gain β of a bipolar transistor was described, and low temperature coefficient of the BVR was achieved by using simple circuit form. The proposed circuit was designed for CSMC 0. 5μm 2P3M mixed signal CMOS process. Cadence Spectre-based simulations demonstrate that the average temperature coefficient of the BVR was 5.0×10-6/℃ over a temperature range of -40 to 85 ;C using a 3. 6 V supply voltage.
出处
《湖北大学学报(自然科学版)》
CAS
2013年第2期160-163,167,共5页
Journal of Hubei University:Natural Science
关键词
带隙基准
CMOS
指数曲率补偿
bandgap reference
CMOS
exponential curvature compensation