TiC/a-C:H薄膜的性能研究

Performance of TiC/a-C:H Thin Film

在电弧离子镀技术沉积富碳TiC薄膜的过程中研究了不同乙炔流量对沉积膜的形貌、成分性能的影响。结果表明,利用电弧离子镀技术在铝合金衬底上能够成功的沉积出含有富碳的TiC膜层,并且沉积的薄膜与衬底的结合良好。实验表明,随沉积时乙炔流量的增大,膜层中C和Ti原子比逐渐增加,同时膜层成分由较纯的TiC结构的薄膜逐渐转变为含非晶碳的TiC膜层,在乙炔流量为50,100,150和200ml.min-1时,膜层的C和Ti的原子分数比分别为1∶1,9.5∶1.0,15∶1和19.4∶1.0。膜层中富余的碳是以非晶碳的形式存在的,TiC与非晶碳以一定量的配比使这层复合膜达到了较好的表面光洁度。

The carbon rich TiC films prepared by arc ion plating were studied, meanwhile, the influences of the film morphology, composition, performance under different flow rate of the CEH2 gas were discussed. The results showed that the arc ion plating technology could deposit the carbon-rich TiC film successfully on aluminum alloy substrate, with good quality. The experiments showed that with the increase of acetylene flow, C and the Ti atomic ratio of the film layer increased gradually, while the relatively pure TiC structure of the fihn gradually transformed to the TiC layer containing amorphous carbon. The ratio of C and Ti in the film layer was 1：1 , 9.5： 1.0, 15：1 and 19.4：1.0 at the acetylene flow rate of 50,100,150 and 200 ml·min^-1. The surplus carbon in the fihn was the form of amorphous carbon.