摘要
在不同喷铸温度下制备了Zr55Al10Ni5Cu30块体非晶试样,利用电阻率法研究熔体温度对非晶结构弛豫的影响。结果表明,缺陷散射对电阻率的影响高于电子声子散射的影响;低温结构弛豫时,在1300℃时制备的试样保温前后电阻率的差值出现负值;高温结构弛豫后,随着制备非晶时熔体温度的升高,保温前后电阻率的差值逐渐减小。
Structural relaxation of Zr55 Allo NisCu30 metallic glass ejected with different quenching temperatures was studied by means of measuring the changes of electrical resistivity. The results show that the effects of defects scattering on the electrical resistivity is higher than that of the phonon scattering. When the samples are annealed at lower temperature, the difference of electrical resistivity between the annealed sample and the original sample prepared at 1300 ℃ is negative, but the others prepared at low temperature are positive. When the samples are annealed at higher temperature, the difference of electrical resistivity is positive and gradually reduced with the increase of quenching temperature. It is suggested that the kinds of cluster and free atom of metallic glass prepared at 1300 ℃ are changed.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2013年第5期20-24,共5页
Transactions of Materials and Heat Treatment
基金
国家自然科学基金资助项目(50971053)
关键词
大块非晶
结构弛豫
电阻率
熔体温度
metallic glass
structural relaxation
electrical resistivity
quenching temperature
