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Fe掺杂PZT压电陶瓷的制备及其性能研究 被引量:2

Study on the Preparation and Properties of PZT Piezoelectric Ceramics with Fe
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摘要 采用传统固相反应法制备出了性能良好的Pb1-xFex(Zr0.55Ti0.45)1-x/4O3压电陶瓷,研究了烧结温度、Fe的掺杂量对PZT压电陶瓷的结构和电学性能的影响。结果表明,所制备的PFZT压电陶瓷以四方相为主晶相;当烧结温度为1150℃,保温2 h时试样具有最大的体积收缩率;随着Fe加入量增加,介电常数、压电常数降低,介电损耗逐渐减小。 This paper using the traditional solid-state reaction sintering method make PZTF (Pb1-xFex(Zr0.55Ti0.45)1-x/403, X=0, 0.001, 0.002, 0.003, 0.004 )piezoelectric ceramic that has good properties. Study the effect of the structure and electrical properties with sintering temperature and Fe doping. As a result that, the PZTF has a boxy phase, when the sintering temperature at 1150℃ , and keep 2 h,the sample has the biggest contractibility, with the content of Fe increase, the dielectric constant and the Piezoelectric constant are conformity with the traditional PZT, the Dielectric loss is decrease.
出处 《中国陶瓷》 CAS CSCD 北大核心 2013年第6期57-59,共3页 China Ceramics
基金 国家自然科学基金项目(51074123) 西安市技术转移工程项目(CX1254⑧)
关键词 PZT FE掺杂 电学性能 PZT Fe doping electrical properties
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参考文献10

  • 1Hideki ISHII ,Hajime NAGATA,Tadashi TAKENAKA. Jpn. [J].Appl.Phys.,2001,40 (9) : 5660-5663.
  • 2高瑞荣,江文卓,李志华,吴国钦,练力豪,龙翔,谢伟武.超声压电马达用陶瓷材料的研究[J].中国陶瓷,2012,48(3):25-29. 被引量:1
  • 3To shio K, K Toshibas S,Takaaki T. [J]. Japanese Journal of Applied Physics, 1992,31(9)~58-60.
  • 4Kyoung R,Sojin Kim,Hee K J.[J].J Am Ceram Soc,199 8,81(11) :2998-3000.
  • 5Bedoya C. Muller C H. Baudour J L Sr Doped Pbzr xTixO3 Ceramics: Structural study and field-include reorientation of ferroelectric domains 2000,(B)75:45-52.
  • 6Chen TY.EdPbTiO~ intended for surface acoustic wave devices 2003, (23):2171-2176.
  • 7Park J H, Park J Y, Park J G, et al. Piezoelectric properties in PMN-PT relaxor ferroelectrics with MnO2 addition[J]. Journal of the European Ceramics Society, 2001,21 : 1383-1386.
  • 8Yoo J H, Lee Y W, Yoon K H et al. J Appl Phy [J]. 2001,40(5A):3256.
  • 9李传山,沈建兴,张雷,董金美.PZT压电厚膜的研究现状与进展[J].硅酸盐通报,2006,25(5):103-107. 被引量:7
  • 10唐春玖,赵伟明,刘祖刚,朱文清,蒋雪茵,张志林,许少鸿.绿色陶瓷厚膜电致发光器件研究[J].光学学报,2000,20(1):139-141. 被引量:2

二级参考文献35

  • 1夏冬林,刘梅冬,徐慢,赵修建.PZT铁电薄、厚膜及其制备技术研究进展[J].材料导报,2004,18(10):64-67. 被引量:9
  • 2赵伟明,张志林,蒋雪茵,刘祖刚,许少鸿.陶瓷基片薄膜电致发光器件[J].发光学报,1995,16(3):256-260. 被引量:8
  • 3诸爱珍.PZT二元系压电陶瓷的掺杂改性[J].江苏陶瓷,1995(3):31-34. 被引量:3
  • 4Chen H Y,Mend Z Y.Effect of ratio Zr/Ti the properties of PMMN-PZT ceramics near the morphotropicphase boundary.Materials Science and Engineering,2003,B99:433-436.
  • 5Bhalla S.A.,Guo R.Y.,Alberta F.E..Some comments on the morphotropic phase boundary and property diagrams in ferroelectric relaxor systems.Materials letters2002,54:264-268.
  • 6Koch M,Harris N,Maas R,et al.A novel micropump design with thick-film piezoelectric actuation[J].Meas Sci Technol,1997,(8):49-57.
  • 7Kim S J,Kang C Y,Choi J W,et al.Properties of piezoelectric actuator on silicon membrane,prepared by screen printing method[J].Materials Chemistry and Physics,2005(90):401-404.
  • 8Moilanen H,Leppavuori S.Laser interferometric measurement of displacement-field characteristics of piezoelectric actuators and actuator materials[J].Sens Actuators A,2001(92):326-334.
  • 9Morten B,Cicco G D.Prudenziati M.Resonant pressure sensor based on piezoelectric properties of ferroelectric thick films[J].Sensors and Actuators A,1992,31:153-158.
  • 10Beeby S P,White N M.Silicon micromechanical resonator with thick-film printed vibration excitation and detection mechanisms[J].Sensors and Actuators A,2001,(88):189 ± 197.

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