磁控溅射制备Ru-B薄膜的研究

Study of Ru-B Films Prepared by Magnetron Sputtering

采用射频磁控溅射技术制备了Ru-B薄膜,利用掠入射X射线衍射(GIXRD)、高分辨透射电子显微镜(HRTEM)、原子力显微镜(AFM)等分析技术对薄膜的相结构、沉积速率以及表面形貌进行了研究分析。结果表明:在室温下制备的Ru-B薄膜均为非晶态。薄膜的沉积速率不随溅射时间变化,但随溅射功率的增加而增大。薄膜表面光滑致密质量良好,随着溅射时间的延长,薄膜表面晶粒大小和粗糙度增大。溅射功率影响着基片表面粒子的形核长大和迁移扩散速率,进而影响薄膜的表面形貌。

Ru-B films were prepared by RF magnetron sputtering technique. The phase structure, deposition rate and surface morphology of Ru-B films were researched and analyzed by glancing incidence X-ray diffraction （GIXRD）, high resolution transmission electron microscopy （HRTEM） and atomic force microscope （AFM）. The results indicated that the Ru-B films deposited at room temperature were all amorphous. The deposition rate was not changed with the gputtering time, but increased linearly with the sputtering power. The surface of films was smooth, dense and fine, and the grain size and surface roughness were increased with the sputtering time. The sputtering power affects the nucleation growth and the migration diffusion rate of substrate surface particles, and then affects the surface morphology.