适于双向和中频应用的3.3kV高速IGBT模块

3.3kV High Speed IGBT Module Applicable to Two-way and Intermediate Frequency Applications

研发了3.3kV高速IGBT模块。优化寿命控制极大地降低了关断损耗和恢复损耗。该高速特性适用于双向和中频应用,例如谐振DC/DC转换器,展示了谐振DC/DC转换器模拟电路中IGBT的开关行为和二极管的反向恢复行为。显然,这种新设计的模块具有比传统高速模块更低的损耗,因此,更适合于双向和中频应用。该设计概念也可用于6.5kVIGBT模块设计。另外,对谐振DC/DC转换器模拟电路,将新设计模块中二极管的损耗与3kV-SiC-JBS损耗做了比较。

3.3kV high-speed IGBT module is developed. Optimized duration control has significantly reduced the shut-off loss and rerun loss. The high-speed feature is applicable to two-way and intermediate applications, such as harmonic oscillatio DC/DC convertor. The switching perforamance of IGBT and backward recovery performance of diode in harmonic oscillatio DC/DC convertor simulation circuil is demonstrated. It is obvious that the newly-designed module enjoys less power loss compared with the traditional high-speed module, which means it is more applicable for two-way and intemediate frequency application. The design concept can also be applied to the design of 6.SkV IGBT module. On the other hand, as for harmonic oscillatio convertor simulation circuit, the diode loss of newly-designed module and the 3kV-SiC-JBS loss are compared.