微米印制技术中使用反应离子腐蚀过程的研究

Study on RIE process for micro-contact-printing technology

选取4英寸的晶元切割制成相同的测试样品.试验研究不同的腐蚀气体,以及混合气体配比腐蚀效果,得到对本试验所生成结构有利的腐蚀介质.研究调节腐蚀过程中的气体流速,压强,高频功率等参数组合,取得比试验参考数据高腐蚀速度,良好的表面平整度,较高的腐蚀的选择比.器件结构的角度满足制作印制印章所需的脱模角度,实验研究讨论了不同工艺参数对反应离子腐蚀过程的作用的原理和影响,有助于分析和调节反应离子腐蚀的过程.

The 4-inch wafer is divided and prepared as the test samples. The etching-gas, the pressure, the gas flow rate and the high-frequency power are studied for optimizing the reactive ion etching process. In this paper, the influence of different etching parameters on reactive ion etching process is analyzed and discussed. As the result of this work the etch rate, selectivity, and the profile of the structure are significantly better than the reference process.