低In组分量子阱垒层AlGaN对GaN基双蓝光波长发光二极管性能的影响

Effect of AlGaN as Low Indium Component Quantum Well Barrier Layers on the Performance of Dual-Blue Wavelength Light-Emitting Diodes Based on GaN

采用数值分析方法对含有低In组分AlGaN垒层InGaN/GaN混合多量子阱双蓝光波长发光二极管进行模拟分析.结果表明,这种AlGaN量子阱垒层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性及减少电子溢出,实现电子空穴在各个量子阱中的平衡辐射,减弱了双蓝光波长发光二极管的效率衰减.此外,通过改变AlGaN量子阱垒层的Al组分,调控双蓝光波长发光二极管发射光谱的稳定性:当Al组分为0.08时,双蓝光波长发光二极管的光谱在小电流和大电流下较稳定,而Al组分为0.09时,光谱只在40～100 mA电流范围内较稳定.

The effect of AlGaN as low indium component quantum well barrier layers on the physical properties of dual-wavelength light-emitting diodes （LEDs） based on GaN has been investigated numerically. The simulation results show that the A1GaN barrier layers can improve the distribution of electrons and holes more uniformly and realize the radiation equilibrium of electrons and holes in the mixture multi-quantum wells, and further reduce the efficiency droop of dual-blue wavelength LEDs at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through control of AI composition of the AlGaN barrier layers. It can be found from the results that the emission spectrum of dual-blue wavelength LEDs is more stable at low current and high current with the Al composition of 0. 08, while the emission spectrum is more stable at the current between 40 - 100 mA with the A1 composition of 0. 09.