Epitaxial Lead Selenide Layers over a Wide Range of Their Thickness on Dielectric Substrates
被引量：1
Epitaxial Lead Selenide Layers over a Wide Range of Their Thickness on Dielectric Substrates
出处
《材料科学与工程（中英文B版）》
2013年第2期97-103,共7页
Journal of Materials Science and Engineering B
关键词
硒化铅
介质基片
厚度
相对变形
晶格常数
生长介质
氯化钠
氟化钡
Epitaxial PbSe layer, dielectric substrate, deformation-mismatch, layer color, effective ＂negative＂ pressure.
共引文献2
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1Arif M. Pashaev,Omar I. Davarashvili:,Zaira G. Akhvlediani:,Megi I. Enukashvilit,Revaz G. Gulyaev,Vladimir P. Zlomanov.The Structure of Thin Epitaxial Layers of Lead Selenide[J].材料科学与工程（中英文A版）,2013,3(2):116-121.
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2Arif M. Pashaev,Omar I. Davarashvili,Megi I. Enukashvili,Zaira G. Akhvlediani,Revaz G. Gulyaev,Vladimir P. Zlomanov.Nanolayers of Lead Selenide on Potassium Chloride Substrates： Specific Features of Formation[J].材料科学与工程（中英文B版）,2013,3(4):235-238.
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4Arif M. Pashaev,Omar I. Davarashvili:,Zaira G. Akhvlediani:,Megi I. Enukashvilit,Revaz G. Gulyaev,Vladimir P. Zlomanov.The Structure of Thin Epitaxial Layers of Lead Selenide[J].材料科学与工程（中英文A版）,2013,3(2):116-121.
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