摘要
研制了一种性能优良的全固态C频段高效率移相氮化镓(GaN)功率放大器模块。介绍了该功放模块设计方案及工作原理,并给出了该功放模块技术参数实验测试结果。该模块输出功率30W,带宽10MHz,带有6位移相功能,具有C频段高频率、固态、小型化、高效率、高功率密度、高击穿电压特性,是一种目前国内外尚无类似集成设计的最新高性能氮化镓(GaN)功率放大器模块。因其功放模块输出末级采用了美国Cree公司第三代宽禁带GaN功放管优化设计,实现了固态C频段高效率功率输出。
A high-efficiency solid-state C-band phase shifted gallium nitride （GaN） power amplifier module with excellent performance has been developed. The design scheme and working principle of GaN power amplifier module are introduced, and the experimental test results of power amplifier module technical paramters are giv- en. The output power of the module is 30 W （CW）, bandwidth is 10 MHz, with 6 bit phase shift. It is featured by C-band high-frequency, high efficiency, high power density and high breakdown voltage. Currently, it is a latest high-performance GaN power amplifier module with no similar intergrated design at home and abroad. The last stage of the power amplifier is optimized by using a third generation wide bandgap GaN amplifier tube from the American Cree Ltd. It can realize all solid-state C-band high-efficiency output power.
出处
《电讯技术》
北大核心
2013年第5期623-627,共5页
Telecommunication Engineering
