多量子阱垒结构优化提高GaN基LED发光效率研究

Study on Improving Light-emitting Efficiency of GaN-Based Light-emitting Diode by Optimization of MQW Barrier structures

为了解决由于极化效应引起的漏电流影响发光效率的问题,以k.p理论为基础建立多量子阱模型,分析研究了GaN基LED中不同的InGaN/InGaN多量子阱发光层势垒结构。基于化合物半导体器件的电学、光学和热学属性的有限元分析,设计与优化多量子阱中靠近P型AlGaN电子阻档层倒数第二层势垒,显著提高了光输出功率,减少漏电流.数值模拟分析表明,改良多量子阱势垒能够大幅提高高亮度、高功率器件结构光电特性。

GaN--based light--emitting diode （LED）with different barrier structures in InGaN/InGaN multiple quantum well （MQW） have been numerically investigated using k.p theory establishing many quantum well model to solve current leakage caused by polarization effects influencing the luminous efficiency prohlem.lt is found that the structure with only changing the second button down barrier close to p--AIGaN electron blocking layer shows improved light output power, lower current leakage with finite element analysis of electrical, optical and thermal properties of compound semiconductor devices.Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the new barrier in high brightness and power devices.