3in锑化铟晶片研磨工艺研究

Research on Grinding Process of 3-inch InSb Wafer

随着现代光电器件工艺的不断改进以及焦平面器件像元数的不断增加,大尺寸晶片越来越受到工艺人员的重视,晶片研磨过程中的表面平整度或总厚度偏差(TotalThickness Variation,TTV)数值有所增加。为了满足工艺人员对大尺寸晶片的要求,降低了研磨工艺中晶片的TTV值。在对不同研磨条件下所得到的晶片的TTV进行研究后,制定了合理的研磨工序。

With the improvement of the modern photoelectric device technology and the increase of the pixels in a focal plane array device,the total thickness variation（TTV） of wafers in a grinding process is improved because of more and more attention paid to large size wafers.To meet the requirements of large size wafers,their TTV values are reduced in the grinding process.After the TTV values of the wafers obtained under different grinding conditions are analyzed,a reasonable grinding procedure is established.