基片温度对铌掺杂ITO透明导电薄膜性能的影响

Effects of Substrate Temperature on the Properties of Nb-Doped ITO Thin Films

采用磁控溅射法以铌(Nb)掺杂氧化铟锡(ITO)为靶材制备了厚度为300nm的ITO:Nb薄膜,研究了不同基底温度下,薄膜的结构、导电性和可见光区的透过率。XRD分析表明所制备的ITO:Nb薄膜均为In2O3相;AFM显示ITO:Nb薄膜的均方根粗糙度随着温度的升高逐渐变大;薄膜的电阻率随着温度的升高逐渐减小,在300℃时得到最小值1.2×10-4·cm。电阻率下降主要是因为霍耳迁移率增大和载流子浓度逐渐增加。ITO:Nb薄膜在可见光内的平均透过率均大于87%,且随着温度的升高,吸收边发生"红移",禁带宽度逐渐增加。

ITO：Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300 °C. The structure, conductivity, and the optical transmission in the visible region of ITO：Nb films were investigated. The results of XRD analysis indicate that ITO：Nb thin films are In 2 O 3 single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10 -4 ·cm at 300 °C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration.