一种高隔离度低损耗CMOS射频收发开关设计方法

A Design technique for high isolation and low insertion loss CMOS T/R switch

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摘要本文采用了LC并联谐振的办法设计了高性能的CMOS收发开关,由于消除了CMOS晶体管的寄生电容的影响,降低了开关电路的插入损耗、提高隔离性能。同时利用直流偏置和交流浮动技术来提高开关的功率容纳能力。采用TSMC0.35 m RF-CMOS工艺设计的收发开关,模拟结果表明谐振频率工作点的插入损耗为1.03dB,收发端隔离39.277dB,输入1dB压缩点(P1dB)功率26.28dBm。 LC shunt resonance technology is used to fabricate the CMOS transmit/receive switch.High isolation and low insertion loss performance are achieved with the elimination of CMOS transistor’s parasitical capacitance.DC bias voltage and AC-floating techniques are used to improve the power handling capability.The T/R Switch is based on the TSMC 0.35 μm RFCMOS process.The simulation exhibits that the insertion loss is 1.03dB,the isolation between transmit and receive access is 39.277 dB at the resonance frequency,and the input 1dB compression point（P1dB） is 26.28 dBm.

作者杨小峰郝跃

机构地区西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室

出处《电路与系统学报》北大核心 2013年第2期223-227,共5页 Journal of Circuits and Systems

关键词 CMOS 收发开关 LC谐振插入损耗隔离度 CMOS transmit/receive switch LC resonance insertion loss isolation

分类号 TN432 [电子电信—微电子学与固体电子学]

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一种高隔离度低损耗CMOS射频收发开关设计方法

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