带有源巴伦的CMOS宽带低噪声放大器设计

Design of broadband low noise amplifier with source barron CMOS

设计了一种400～800MHz带有源巴伦的低噪声放大器(balun-LNA).电路输入级采用共栅结构实现宽带匹配,输出端使用共源漏技术来实现巴伦功能,将单端输入信号转变为差分输出信号,利用参数优化设计来降低噪声性能.电路采用TSMC 0.18μm RF CMOS工艺仿真,结果表明:在400～800 MHz工作频段内,balun-LNA的输入反射系数小于-12dB,噪声系数为3.5～4.1dB,电压增益为18.7～20.5dB,在3.3V电压下功耗约为17.8mW.

A 400～800 MHz wideband low noise amplifier（balun-LNA） with active balun was proposed,in which common gate amplify architecture in t he input was used and the frequencies could be continuously tuned continuous fro m 400 to 800 MHz.A simply common source/drain structure was used to provide a balun function which transform single input signal to differential output.The n oise figure was reduced by the optimized parameters.Based on TSMC 0.18 μm RF C MOS process,simulation results show that in 400～800 MHz,the balun-LNA′s ref lection coefficient is less than-12 dB,noise figure is 3.5～4.1 dB,voltage ga in is about 18.7～20.5 dB,and the power dissipation is about 17.8 mW while the power supply is 3.3 V.