摘要
利用正电子湮没谱(PAS)及Fourier变换红外吸收光谱(FTIR)技术研究了快中子辐照直拉硅(CZSi)中辐照缺陷。研究发现,经快中子辐照后的硅中会有大量的单空位型缺陷VO及多空位型缺陷V2和V2O;经200～450℃热处理后,FTIR光谱中出现的720和919.6 cm–1红外吸收峰为单空位型缺陷,其正电子寿命与VO的寿命接近,约为290 ps;经450～600℃热处理后,随单空位型缺陷VO消失,V4型缺陷浓度迅速增加,600℃热处理后其浓度达到最大(相对浓度约为70%)。
The irradiation defects in neutron-irradiated Czochralski silicon （CZSi） were analyzed by positron annihilation spectros- copy and Fourier transform infrared （FTIR） spectroscopy. The results show that there are the massive monovacancy-type defects （VO） and multi-vacancy-type defects （V2 and V20） in irradiated CZSi. After heat-treatment at 200-450 ℃, the absorption bands at 720 and 919.6 cm-1 in measured FTIR spectra are associated with the monovacancy-type defects, and they have the same positron lifetime as VO （i.e., 290 ps）. After heat-treatment at 450-4500 ℃, the monovacancy-type is eliminated gradually, the V4-type defects are enhanced, and the concentration of the V4-type defects reaches a maximum of 70% after heat-treatment at 600 ℃.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2013年第6期808-811,共4页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金项目(10904109
50872028)
河北省教育厅科研计划项目(2009318)
天津理工大学校级项目(LGYM-201016)资助
关键词
直拉硅
正电子湮没
中子辐照
空位型缺陷
Czochralski silicon
positron annihilation
neutron irradiate
vacancy-type defect
