K9和Si(100)基片上Be薄膜微观组织、晶粒尺寸及表面粗糙度的演变规律

Evolution rule of microstructure, crystal grain size and surface roughness for Be films grown on K9 and Si(100) substrates

采用真空蒸镀法分别在K9和Si(100)基片上制备Be薄膜,在相同沉积速率下,K9基片上Be薄膜生长形态和Si基片上Be薄膜生长形态存在差异。但是两者随沉积速率增加具有相似的演变规律,即由等轴晶变化至纤维晶,再至粗大等轴晶。XRD和XPS分析结果表明:不同基片和蒸发温度下制备的Be薄膜均主要由HCP结构的α-Be相组成,且表面存在一定氧化;对于非晶K9基片,Be薄膜晶粒取向较单一,(101)始终为显露晶面;而单晶Si(100)基片上Be晶粒取向多样,在一定沉积速率下显露特定晶面;相同沉积时间下K9和Si(100)基体上生长的Be薄膜粗糙度Rq变化趋势十分相似,两者随Be薄膜沉积速率(v)增加先急剧增大后趋于平缓;以细小等轴晶生长的薄膜表面光洁度较高,而以纤维晶或粗大混晶生长的薄膜表面粗糙度较大。

Be films grown on K9 and Si（100） substrates were fabricated by an evaporation deposition method. At the same deposition velocity, the growth morphology of Be films grown on the K9 substrate is different from that grown on the Si（100） substrate. Whereas, both of them have the similar evolution rule with the increase of deposition velocity, which changes from an equiaxed grain to a fiber grain, and then to a coarsening equiaxed grain. XRD and XPS analyses indicate that the Be films grown on different substrates at different deposition velocities consist mainly of HCP structure a-Be phase, and all of the Be film surface is oxidized. For the amorphous K9 substrate, the preferential growth orientation of Be film is always exposed to （101） crystal face. While, the grain orientation of the Si substrate is diversiform, a special crystal face can be shown at a certain deposition velocity. For the Be films grown on K9 substrate and Si（100） substrate, their variation trend of roughness Rq is similar at the same deposition time. Both of them increase sharply with the increase of deposition velocity, and then enhance slightly. The Be films with an equiaxed grain is very smooth, while the surface roughness of the fiber grain and coarsening mixed grain is very large.