高质量GaN薄膜的MOCVD同质外延生长

Homoepitaxial Growth of High Quality GaN Films by MOCVD

采用金属有机化学气相沉积(MOCVD)技术,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面粗糙度小于0.5 nm,其位错密度低于106cm-3。

GaN homoepitaxial films were grown by MOCVD on free-standing GaN substrates.The GaN films were studied by XRD and AFM.The FWHM of(002) was less than 100 arcsec by XRD.Continuous step flows were seen on the AFM photograph.The RMS of GaN films was less than 0.5 nm,and the dislocation density was lower than 106 cm-3.