摘要
用Si离子注入织构的YBCO高T_C超导薄膜制备RF-SQUID)器件,在略高于液氦温度下观察到了量子干涉效应,并用直流I—V特性和X射线衍射证实和分析了Si离子注入对超导薄膜临界电流的弱化作用及对超导相的损伤作用。
Si+ implantation was used in fabricating RF-SQUID on a c-axis oriented high Tc YBCO superconducting thin film,and a Quantum interference effect was observed at a temperature just above 78K.DC.I-V characteristic and X-ray diffraction measurements were made to prove and analyze the effects of S+ implantation on weakening critical current of the supercoaducting thin films and damaging the superconducting phase.
出处
《低温与超导》
CAS
CSCD
北大核心
1991年第4期64-69,共6页
Cryogenics and Superconductivity
