SiC MOSFET驱动电路及实验分析

SiC MOSFET Driver and Experiment Analysis

根据SiC MOSFET开关特性,设计了一种SiC MOSFET的驱动电路,在此基础上采用双脉冲测试方法,对SiC MOSFET的开关时间、开关损耗等进行了实验测量,分析了不同驱动电阻对SiC MOSFET开关时间、开关损耗等的影响。

One kind of driver circuit for SiC MOSFET was discussed according to the switching characteristics of SiC MOSFET. Based on the double pulse test circuit, the switching time and switching loss of SiC MOSFETs were measured with different gate resistance. Then, different resistance＇s influence on the switching time and switching loss was analyzed.