电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压

Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam

对不同加速电压电子束泵浦下的ZnO/Zn0.85Mg0.15O量子阱的荧光光谱进行了研究。样品利用分子束外延技术在蓝宝石衬底上生长。激子隧穿使非对称双量子阱的激发效率相对于对称阱有了明显提高。非对称阱的结构设计使最佳激发电压从对称阱的7 kV降低到了更适合器件小型化的5 kV。

Cathodoluminescence behavior multi-quantum wells was reported in this plasma-assisted molecular beam epitaxy. vs. accelerating voltage of electron beam in ZnO/ZnMgO paper. The samples were grown on sapphire substrate by By exciton tunneling, the excitation efficiency was im- proved significantly. In a sample with asymmetric double-quantum-wells, a marked reduction of the optimal acceleration voltage from 7 kV to 5 kV was obtained compared to the symmetrical multi- quantum well sample.