摘要
对单异质结界面系统 ,引入三角近似异质结势 ,利用变分法讨论在界面附近束缚于施主杂质的单电子基态能量 .对 Zn1-x Cdx Se/Zn Se系统的杂质态结合能做了数值计算 ,给出结合能随杂质位置、电子面密度和
A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a thriangular potential.The impurity state binding energy is obtained numerically for the Zn 1-x Cd x Se/ZnSe system.The relations between the ground state binding energy ahd the impurity position,the electron areal density,the Cd composition are given respectively.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
2000年第5期482-486,共5页
Journal of Inner Mongolia University：Natural Science Edition
基金
内蒙古自治区人才工程资助
关键词
异质结
结合能
硒化锌
施主杂质
锌镉硒化合物
heterojunction
binding energy
impurity state
areal density of electron
