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二氧化硅的氢氟酸缓冲腐蚀研究 被引量:2

Research on Buffering Hydrofluoric Fluoride Corrosion of Silicon Dioxide
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摘要 本文讨论了二氧化硅在氢氟酸缓冲(BHF)腐蚀溶液中的腐蚀特性。研究了二氧化硅在腐蚀液中的腐蚀速率、表面粗糙度及腐蚀深度随着NH4F配比、HF配比及腐蚀液温度的变化规律。通过改变腐蚀液配比和腐蚀温度等条件,从腐蚀速率及表面形貌等方面进行了比较和分析,确定不同条件下二氧化硅的腐蚀速率,以及腐蚀条件对二氧化硅表面粗糙度及表面深度的影响。 The etching properties of silicon dioxide in buffered hydrogen fluoride corrosion solutions were discussed. The changing rules of the corrosion rates in both the solutions with different temperatures and densities were studied. The results show that the surface roughness and corrosion depth of silicon dioxide relate to the etching rate which controlled by both temperature condition and composition concentration. We have conformed corrosion rate of silicon dioxide variation under different conditions. So the proper techniques of chemical corrosion can be chosen at different aims in the practical applications.
作者 赵孟钢
机构地区 西安工业大学
出处 《科技信息》 2013年第13期196-197,共2页 Science & Technology Information
关键词 二氧化硅 腐蚀速率 腐蚀深度 表面形貌 粗糙度 Silicon dioxide Corrosion rate Corrosion depth Surface morphology Roughness
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参考文献12

  • 1张巧云,吕志清.微机械加工技术在传感器制作中的应用[J].压电与声光,1998,20(2):140-144. 被引量:5
  • 2张鉴,黄庆安,李伟华.MEMS工艺中反应离子深刻蚀硅片的数值模型研究[J].传感技术学报,2006,19(05A):1426-1429. 被引量:7
  • 3唐琼,崔芳,廖兴才,孙雨南.石英音叉微细加工若干问题探讨[J].微细加工技术,2004(2):66-71. 被引量:4
  • 4Yasuo kunii, Satoshi Nakayama. Wet etching of doped and nondoped silicon oxide films using buffered hydrogen fluoride solution [J]. Electrochem. Soc., 1995, 142: 2510.
  • 5Buhler J, Steiner F, Bahes H. Silicon dioxide sacrificial layer etching in suface micromachining[J]. Micromachining. Microeng, 1997, 7: R1.
  • 6Proksche H, Nagorsen G, Ross D. the influence of NH4F on the etch rates of undoped Si02 in buffered oxide etch[J]. Electrochem. Soc., 1992, 139: 521.
  • 7Somshekhar A, O'brien S. Etching Si02 films in aqueous 0.49% HF [J]. Electrochem. Soc., 1996, 143: 2885.
  • 8Kikuyama H, Waki M, Kawanabe I, Miyashitam, Yabunet, Mikin, Takano J, Ohmit. Etching rate and mechanism of doped oxid in buffered hydrogen fluoride solution[J]. Electrochem. See., 1992, 139:2239.
  • 9Yves Geerts. Design of Multi-Bit Delta-Sigma A/D Converters [M].the Netherlands:Kluwer AcademicPublisher, 2002.
  • 10KNOqq'ER D M. Etching mechanism of vitreous silicon dioxide in HF-Based solutions[J]. J Am Chem Soc, 2000,122:4345-4351.

二级参考文献31

  • 1唐琼,崔芳,廖兴才,孙雨南.石英音叉微细加工若干问题探讨[J].微细加工技术,2004(2):66-71. 被引量:4
  • 2林雁飞,郑志霞,张丹,冯勇建.PYREX玻璃湿法凹槽腐蚀研究[J].微纳电子技术,2005,42(1):33-36. 被引量:5
  • 3张鉴,黄庆安,李伟华.MEMS工艺中反应离子深刻蚀硅片的数值模型研究[J].传感技术学报,2006,19(05A):1426-1429. 被引量:7
  • 4Pelle Rangsten,Christer Hedlund,Iiia V Katardjiev.Etch rates of crystallographic planes in z-cut quartz-experiments and simulation[J].J Micromech Microeng,1998,8:1-6.
  • 5Danel J S,Michel F, Delapierre G. Micromaching of quartz and its appliction to an acceleration sensor[J]. Sensors and Actuators, A: Physical,1990,23(1-3):971-977.
  • 6Sugitani,Nobuyoshi. Manufacture process of quartz vibrator[P].United States Patent:5998223,1999-12-07.
  • 7Danel J S, Michel F, Delapierre G. Micromachining of Quartz and its Application to an Acceleration Sensor[J]. Sensors and Actuators, 1990,23:971-977.
  • 8Iwata H, Multistage Chemical Etching for High-Precision Frequency Adjustment in Ultrahigh-Frequency Fundamental Quartz Resonators[J]. IEEE Trans. on Ultrasonics, Ferroelectrics, and Frequency Control, 2005,52 (9) : 1435-1442.
  • 9Liang Jinxing,Kohsaka F, Matsuo T, et al. Wet Etched High Aspect Ratio Mierostruetures on Quartz for MEMS Application[J]. IEEJ E, 2007,127(7) : 337-342.
  • 10吴学忠,李圣怡,谢立强,等.基于剪应力检测的石英微机械陀螺及其制作方法:中国,200810143292.9[P].2008.

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