摘要
本文完成了R-MOS-C结构的六阶ChebvshevⅠ型片内带通滤波器的设计。该设计针对以MOS管作为压控电阻的潜在问题,给出了提高其线性度的解决方案;并将开关电容放入自动调谐电路,实现了对R-MOS电阻的精确控制。滤波器在SMIC 0.18um工艺流片,实测频率响应曲线随PVT变化在±2kHz。
This paper described the design of a high linearity R-MOS-C bandpass filter on chip. The MOSFET that work in deep triode region was used as resisitanee and the method of enhancing its linearity was also applied in the design.Switch capacitance technology in auto-tuning circuit help to reduce the variation of frequency response with PVT to 2kHz.
出处
《科技信息》
2013年第13期434-435,共2页
Science & Technology Information
