CdS纳米粒子自组装体系I-V特性的数值模拟

The Numerical Simulation of CdS Nanoparticle Self-assembly Systems

对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 .对 Cd S纳米粒子自组装体系在室温下的 I- V特性进行了计算机模拟 ,结果与实验符合得较好 .

In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.The current voltage characteristic of CdS nanoparticles self assembly systems at room temperature is simulated numerically.The numerically simulated results are in good agreement with the experimental results.This method has important means in the experiment and realization of the nanometer devices.