NTDFZSi片低温退火电阻率回升现象

The Phenomenon of NTDFZSi Wafer Resistivity Restoration after Low Temperature Annealing

实验结果表明ＮＴＤＦＺＳｉ片电阻率下降的幅度与硅片冷却速率有关．在由 １２００℃冷却到室温的过程中，冷却速度越快，硅片电阻率下降的幅度越大．另外，样品的厚度也是一个重要因素．实验指出，当样品厚度在１２００μｍ以上时，硅片电阻率变化很小．特别值得指出的是，那些经高温退火电阻率下降的硅片再经６５０—６８０℃低温退火，可使硅片的电阻率得到回复。

The experimental result shows that Si wafer cooling speed has influenced on decrease of its resistivity. When it is cooled to room temperature from 1200 ℃, the more quickly cooling is, the more dramatically decrease of resistivety is; and sample thickness is an important factor. If sample thickness is over than 1200 m, Si wafer resistivety is little varied. After high temperature diffusion, the resistivity of Si wafer was decreased but when reannealing at 650-680℃ was restored.