Ni_3[Ge_2O_5](OH)_4纳米盘的制备与表征

Preparation and characterizion of the Ni_3[Ge_2O_5](OH)_4 nanodisk

基于改变阳离子半径对蛇纹石结构层的可调性,以氧化锗和氢氧化镍为原料,通过水热法合成了Ni3[Ge2O5](OH)4纳米盘.采用X-射线衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)和红外光谱仪(FTIR)等手段对不同反应时间合成样品的物相、形貌和结构进行了分析表征.结构分析表明,合成样品为纤蛇纹石结构,其晶胞参数为a=5.300,b=9.199,c=14.631,α=γ=90°,β=93.51°.形貌分析表明,样品为六边形纳米盘状,其粒径约为0.2～1μm.分析认为,样品生长过程与蛇纹石层生长机理相一致。

Based on the adjustable of the structural layer in the serpentine by altering cationic radius, the Ni3 [-Ge20s ]（OH）4 nanodisks were successfully fabricated by hydrothermal treatment with active GeO2 and Ni（OH）2 as the raw materials. The phase, structure and morphology of the samples for different re- action time were characterized by X-ray diffraction（XRD）, scan electron microscopy（SEM）, high-resolution transmission electron microscopy（HRTEM） and Fourier transform infrared spectroscopy（FTIR）. The XRD analysis indicates that the structure of synthetic Ni3 [-Ge2O5] （OH）4 is in accordance with o o o chrysotile and the cell-parameters are a=5. 300 A,b=9. 199 A,c=14.6al A,a=）γ=90° ,β-=93.51°. The diameters of hexagonal-like Ni3 [-Ge2O5] （OH）4 nanodisks are found in the range 0.2-lum by the SEM and TEM analyses. The layers growth mechanism of the serpentine under hydrothermal conditions is proposed by means of the experimental results.