N^+注入诱变选育井冈霉素A高产菌的研究

Breeding of high producing jinggangmycin A mutant strain by N^+ ion beam implantation

以一株井冈霉素生产菌株吸水链霉菌井冈变种(Streptomyces hyroscopicus var.Jingganggensis yen)SHJ001为出发菌株,经能量10 keV,剂量80×2.6×10^(13)ion/cm^2氮离子注入诱变,摇瓶筛选得到一株高产菌株SHJ381,其有效成分井冈霉素A(VAL-A)含量比出发菌株提高了13%。高产菌株具有良好的遗传稳定性。通过正交设计优化发酵培养基后,井冈霉素A含量由24 823 mg/L提高到34 488 mg/L,增加了38%。通过菌种选育和发酵优化,发酵液中VAL-A含量较最初提升了约56%,具有显著的增产效果。

The original strain SHJ001 of Streptomyces hyroscopicus var. Jingganggensis yen for producing jinggangmycin A （VAL-A） was used in mutation by low energy nitrogen ion beam implantation technology. As a result, the effective com-ponent VAL-A of mutant strain SI-IJ381 implanted with 10 keV N ^＋ （80×2.6×10^13ion/cm^2） was 13% higher than that of the starting strain. After an orthogonal experiment, it was found that the optimal medium was helpful to increasing the yields of the VAL-A by 38% （from 24 823 mg/L to 34 488 mg/L） than the original medium. The results indicated that this high producing mutant using the optimized medium could significantly increase the VAL-A production by about 56% and it had fine genetic stability.