摘要
ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a （ZrO2）0.6（SiO2）0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of -25% over a period of 10 years （determined by extrapolating the charge loss curve measured experimentally）, even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.
ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a （ZrO2）0.6（SiO2）0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of -25% over a period of 10 years （determined by extrapolating the charge loss curve measured experimentally）, even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.
基金
supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021)
the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124)
the State Key Program for Basic Research of China (Grant No. 2010CB934201)
the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)
