摘要
用低频倒置扭摆对改性偏铌酸铅铁电陶瓷的内耗进行了研究.在新加工的样品中发现了六个内耗峰,分别位于70℃(P1峰)、 90℃(P2峰)、200℃(P3峰)、260℃(P4峰)、430℃(P5峰)和510℃(P6峰)处.对引起P3、P1、P2和P4峰的物理机制进行了详细探讨.分析结果表明,P3峰的本质是一定化的 Debye弛豫内耗峰。相应的激活能和指前因子分别为1.014V和 2.4×10-14s.它源于氧空位与畴壁的相互作用. P1、 P2和 P4峰与试样的切割加工密切相关,可归结为点缺陷与位错的交互作用.
The internal friction Q-1 of Lead Metaniobate ceramics was investigated by inverted torsion pendulum. Six internal friction peaks, with their location around 70℃(P1), 90℃(P2), 200℃(P3), 260℃(P4), 430℃(P5) and 510℃(P6), respectively,were observed in a freshly-worked PbNb2O6 ceramics. The mechanisms for P3, P1, P2 and P4 were analyzed in detail. P3 is a broadened Debye relaxation peak in nature, and its corresponding activation energy and pre-exponential factor are 1.01eV and 2.5x10-12s, respectively. Thir peak is attributed to the interaction between domain walls and oxygen vacancies. P1, P2, and P4 are clearly related to the working processes. They can be caused by the interaction between dislocations and point defects.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第5期827-832,共6页
Journal of Inorganic Materials
基金
863项目!(863-715-006-0060)
关键词
内耗
偏铌酸铅陶瓷
畴壁
氧空位
铁电
压电
internal friction
lead metaniobate ceramics
domain walls
oxygen vacancy