铜上采用镍过渡层化学气相沉积金刚石薄膜的研究

Diamond Films Deposited on Copper Substrate with a Nickel Intermediate Layer

采用镍过渡层研究了铜基片上金刚石薄膜的化学气相沉积．镍过渡层与铜基底间在高温退火条件下形成的铜镍共晶体明显地增强了金刚石薄膜与铜基片之间的结合力．用扫描电子显微镜和激光Ｒａｍａｎ谱研究了薄膜的形貌和质量；采用高温氢等离子体退火工艺在基片表面形成的铜镍碳氢共晶体上抑制了无定形碳和石墨的形成，有利于金刚石薄膜的生长．金刚石薄膜的均匀性受到共晶体的均匀性的影响．

The chemical vapor deposition of diamond films on copper substrate with Ni intermediate layer was studied. The adhesion of the diamond film on the copper substrate was improved due to the formation of a Cu-Ni eutectic between the copper and the Ni interlayer. Scanning electron microscopy and Raman spectroscopy were used to investigate the films: The diamond films with (100) oriented diamond particles were obtained under suitable conditions, which involved scratching carefully the substrate with diamond grits and subsequently annealing the substrate with high temperature hydrogen plasma. The uniformity of the Cu-Ni-C-H eutectic influenced the uniformity of the diamond film.