多晶硅减反射复合结构的制备与性能

Preparation and Property of Antireflective Complex Structures on Multicrystalline Silicon Surface

结合传统的混合酸腐蚀法与Ni辅助腐蚀法,在多晶硅表面制备了减反射复合结构。研究了Ni溅射时间对多晶硅表面反射率、形貌以及光致发光性能的影响。用分光光度计测量了多晶硅表面的反射率,用扫描电镜观察了表面形貌,并用光致发光仪测试了表面的光致发光谱。研究发现,经过混合酸腐蚀与Ni辅助腐蚀的共同作用后,在多晶硅表面形成了一种附有细小针柱状微结构的"U"形腐蚀坑的复合结构,理论和实验分析表明这种复合结构具有良好的陷光效果。当溅射Ni的时间为500s时,双重腐蚀后的多晶硅表面在300～900nm波长范围内的平均反射率最低,仅为10.1%。

By combining nitric acid etching and Ni-assisted etching, the antireflective complex structure on multicrystalline silicon surface is prepared. Effects of the sputtering time of Ni on the performances including surface reflectance, morphology and photoluminescence property are studied. The surface reflectance of the multicrystalline silicon wafers is analyzed by spectrophotometer. The morphologies are observed by scanning electron microscopy and the photoluminescence properties are analyzed by photoluminescence measurement system. It is found that U-shaped etching pits with many needle-like structures inside are formed after the combined nitric acid etching and Ni-assisted etching. The results show that this kind of complex microstructures can significantly reduce the surface reflectance. The minimum surface reflectance in the range from 300 nm to 900 nm is only 10.1% when the sputtering time of Ni is 500 s.