Ⅳ-Ⅵ族半导体材料构成光子晶体能态密度特性

Density states of photonic crystal with Ⅳ-Ⅵ family of Semiconducting material

应用平面波展开法,取Ⅳ-Ⅵ族的PbS、PbSe和PbTe半导体材料构成二维三角晶格光子晶体。数值模拟其构成光子晶体能态密度特性。结果表明,随着介电常数的增大,形成的光子带隙宽度增加。结论为光子晶体器件的开发提供参考。

Two- dimensional triangle lattice photorric crystal were consist of PbS, PbSe and PbTe ]V - ~ family of Semiconducting material, energy state density distribute of photonic crystal were calculated by plane wave expansion method . The results show that, with file increase of dielectric constant, form the photonic band gap width increases, the normalized frequency as filling rate changes. This result provides theoretic basis theoretic basis for the photonic crystal devices.