Cu在CoN和CoSiN薄膜中的扩散研究

Research of Diffusion of Cu in CoN and CoSiN Thin Films

利用磁控溅射的方法在n型硅基底制备了Cu／CoN／Si（100）和Cu／CoSiN／Si（100）薄膜，并对它们进行了不同温度的退火．用原子力显微镜观察了它们的表面形貌．用扫描透射电镜能谱分析法得到了在不同退火温度下铜在上面两种薄膜中浓度与表面距离的分布，然后利用菲克第二定律对Cu／CoN／Si和Cu／CoSiN／Si体系中cu的扩散进行了计算和分析，得出中温条件（300℃-700℃）下Cu在CoN和CoSiN两种薄膜中的扩散系数表达式分别为8．98×10^-13exp（-0．45eV／kT）cHf／s和5．39×10^-11exp（-0．49eV／kT）Cm2／s．

The thin films of Cu/CoN/Si and Cu/CoSiN/Si were prepared on n - type silicon substrate by magnetron sputtering and annealed at different temperature. Their surface morphology were tested by atomic force microscopy （AFM）. Cu content with diffusion distance changes under different temperature were obtained by scanning electron microscopy （SEM） analysis methods. Then calculation and analysis were done on the diffusion of Cu in Cu/CoN/Si and Cu/CoSiN/Si systems via the Second Law of Fick. It can be obtained that the diffusion coefficient expression of Cu in CoN and CoSiN film are 8.98 ×10^-11 exp （ - 0.45 eV/kT） cm2/s and 5.39 × 10^-11exp （ -0.49 eV/kT） cm2/s during medium temperature （300℃ -700℃）, respectively.