Si^+/As^+双离子注入SI-GaAs对注入层电激活均匀性改善的研究

A Study of the Active Uniformity for SI-aAs by Si^+/As^+ Dual Ion Implantation

研究了单 (Si+ )双 (Si+ / As+ )离子注入半绝缘砷化镓 (SI-Ga As)电激活的均匀性 .结果表明 ,L ECSi-Ga As衬底中深电子陷阱能级 (EL 2 )均匀性分布好坏 ,对注入层电激活性有一定影响 .当 SI-Ga As中碳含量小于 5× 1 0 15cm- 3时 ,对注入层电激活影响不大 .采用多重能量 Si+注入 ,可改善栽流子纵向分布的均匀性 ,采用 Si+ / As+ 双离子注入可改善 L EC SI-Ga As衬底中 EL 2横向不均匀分布对电激活均匀性的影响 ,可获得注入层横向的电激活 .

The active uniformity of SI GaAs by Si +/As + implantation was studied. The results showed that the EL2 distribution in LEC SI GaAs affects the active uniformity, whereas the influence is little if the content of carbon is less than 5*10 15 cm -3 . The uniformity in depth is improved by various energy implantation. Dual ion implantation can improve the uniformity caused by the EL2 distribution in LEC SI GaAs substrate.