非晶GeO_2-SiO_2复合薄膜的制备及其红外吸收谱

Preparatio and Infrared Spectra of GeO_2-SiO_2 Thin Amorphous Films

采用锗－硅复合靶射频反应溅射技术，制备了ＧｅＯ_２含量ｘ＝０％～８１％的非晶ＧｅＯ_２－ＳｉＯ_２复合薄膜．用自动椭偏仪进行测量，得到复合氧化物薄膜中ＧｅＯ_２的含量．用傅里叶变换红外光谱仪测得此种薄膜的红外吸收谱随ＧｅＯ_２含量的变化关系，并讨论了其结构特征．

The GeO_2-SiO_2 thin amorphous films with the GeO_2 content x= 0%- 81 % have been prepared by the radio-frequency reactive sputtering with the Ge-Si composite target. The GeO_2 content of these thin films has been obtained using the automatic ellipsometer. The dependence of the infrared spectra on the GeO_2 content was found by means of the Fourier transform infra-red spectrograph. The structure characterisitics of the composite films was disscussed.