摘要
对半导体激光器短电脉冲调制增益开关法产生皮秒光脉冲动力学过程进行理论分析和实验研究 .基于单模数率方程 ,采用相图 ( Phase Portraits)法分析激光器激射皮秒光脉冲时载流子浓度和光子密度变化的对应关系 .探讨直流参数、调制脉冲参数和器件寄生参量等对产生皮秒光脉冲的影响 .在此基础上 ,研究 In Ga As P/ In
The present paper presents the theoretical analysis and the experimental study of the dynamic behavior of picosecond optical pulse generation from gain switching semiconductor lasers under short electrical pulse modulation. Phase portraits, which describe the relationship between photon density and electron density, were used to visualize the solutions of the rate equations. The simulations were carried out and it was found that the picosecond laser pulse depended on the biased current, electrical pulse, parameters of the device and parasites of package and chip. InGaAsP/InP lasers under short electrical pulse modulation were investigated to obtain the optimum experimental results for generating picosecond optical pulses.
出处
《吉林大学自然科学学报》
CAS
CSCD
2000年第4期47-50,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
国家教育部博士点基金! (批准号 :18B0 10 32 )
关键词
脉冲调制
半导体激光器
皮秒光脉冲
pulse modulation
semiconductor laser
picosecond optical pulse
phase portrait