摘要
采用射频磁控溅射法制备了c轴垂直膜面取向的M型钡铁氧体(BaM)薄膜,研究了溅射功率对BaM薄膜取向及磁性能的影响。结果表明,在溅射功率为80W、110W、140W和170W时所制备的BaM薄膜均具有一定程度的c轴垂直膜面取向,但溅射功率的增高会造成薄膜内晶粒取向混乱,导致薄膜磁晶各向异性降低;当溅射功率为140W时,薄膜具有最高饱和磁化强度(Ms)303kA/m和最小面外方向矫顽力(Hc⊥)191kA/m;适当低的溅射功率更有利于制得磁晶各向异性强的薄膜。
RF magnetron sputtering method has been adopted to prepare M-type barium ferrite （BaM） films with c-axis orientation perpendicular to the film plane, and the effects of sputtering power on c-axis orientation and magnetic properties of BaM films were investigated. The results show that films deposited under sputtering power of 80W, 110W, 140W and 170W all possess a certain degree of c-axis orientation perpendicular to the film plane. Film deposited under sputtering power of 140W possesses the highest saturation magnetization （Ms） of 303kA/m and the lowest coercivity （He） of 191kA/m. The conclusion that a proper low sputtering power is more favorable to prepare BaM films with higher magnetocrystalline anisotropy has been deduced.
出处
《磁性材料及器件》
北大核心
2013年第3期4-7,共4页
Journal of Magnetic Materials and Devices
基金
国家自然科学基金资助项目(51101028)
中央高校基金资助项目(E022050205)
关键词
BaM薄膜
射频磁控溅射
溅射功率
C轴取向
磁性能
BaM film
RF magnetron sputtering
sputtering power
c-axis orientation~ magnetic property
