期刊文献+

Thermal resistance of high power LED on surface modified heat sink

Thermal resistance of high power LED on surface modified heat sink
原文传递
导出
摘要 For 3 W green light emitting diode (LED), the top surface of commercial heat sink was machined with two different shapes (hole and 'V' shaped) and the thermal performance was tested. The contact surface area of the heat sink was increased by machining process. The observed junction temperature (Tj) from transient cooling curve was high for 'V' shaped surface for all driving currents. Hole shaped surface of heat sink did not influence much on the Tj values. In addition, total thermal resistance (Rth_tot) was not affected by the hole shpaed surface compared to plain surface. Noticeable increases in Tj as well as Rth-tot were observed for 'V' shaped surface for all driving currents (100, 350 and 700mA). The observed correlated color temperature (CCT) values were high for hole and 'V' shaped surfaces and the variation in CCT with respect to time was high for all surfaces measured at 700 mA. Increased lux for modified surface at high driving current (700 mA) was also observed. Very small variation in color rendering index (CRI) values could be observed. For 3 W green light emitting diode (LED), the top surface of commercial heat sink was machined with two different shapes (hole and 'V' shaped) and the thermal performance was tested. The contact surface area of the heat sink was increased by machining process. The observed junction temperature (Tj) from transient cooling curve was high for 'V' shaped surface for all driving currents. Hole shaped surface of heat sink did not influence much on the Tj values. In addition, total thermal resistance (Rth_tot) was not affected by the hole shpaed surface compared to plain surface. Noticeable increases in Tj as well as Rth-tot were observed for 'V' shaped surface for all driving currents (100, 350 and 700mA). The observed correlated color temperature (CCT) values were high for hole and 'V' shaped surfaces and the variation in CCT with respect to time was high for all surfaces measured at 700 mA. Increased lux for modified surface at high driving current (700 mA) was also observed. Very small variation in color rendering index (CRI) values could be observed.
出处 《Frontiers of Optoelectronics》 EI CSCD 2013年第2期160-166,共7页 光电子前沿(英文版)
关键词 light emitting diode (LED) surface modifica- tion transient analysis cumulated structure function optical properties light emitting diode (LED), surface modifica- tion, transient analysis, cumulated structure function, optical properties
  • 相关文献

参考文献12

  • 1Alan M. Lighting: the progress & promise of LEDs. llI-Vs Review, 2004, 17(4): 39-41.
  • 2Poppe A, MicReD D, Mentor G B, Lasance C J M. On the standardization of thermal characterization of LEDs. In: Proceed- ings of the 25th Annual IEEE Semiconductor Thermal Measurement and Management Symposium. 2009, 151-158.
  • 3Park J, Shin M, Lee C C. Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser. Optics Letters, 2004, 29(22): 2656 2658.
  • 4Yovanovich M M, Marotta E E. Thermal Spreading and Contact Resistances. New Jersey: Wiley, 2003, 261-395.
  • 5Krishna Reddy G V, Chikkanna N, Uma Maheswar Gowd B. Experimental evaluation of thermal resistance of composites. International Journal of Recent Technology and Engineering, 2012, 1(2): 16-21.
  • 6Lyeo H, Cahill D G. Thermal conductance of interfaces between highly dissimilar materials. Physical Review B, 2006, 73(14): 144301.
  • 7/ Fletcher L S. A review of thermal enhancement techniqeus foI electronic systems. IEEE Transations on components, Hybrids anl / Manufacturing technology, 1990, 13(4): 1012-1021 |.
  • 8Prasher R. Thermal interface materials: historical perspective, status, and future directions. Proceedings of the IEEE, 2006, 94(8): 1571- 1586.
  • 9Vermeersch B, De Mey G. Influence of thermal contact resistance on thermal impedance of microelectronic structures. Microelectronics and Reliability, 2007, 47(8): 1233-1238.
  • 10Joint Electron Device Engineering Council (JEDEC). Transient dualinterface test method for the measurement of the thermal resistance junction to case semiconductor devices with heat flow through a single path. JESD51-14, 2010.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部