PECVD非晶硅薄膜沉积三维热流场数值模拟

THREE-DIMENSION NUMERTICAL SIMULATION OF THERMAL AND FLOW FIELDS FOR a-Si-H THIN FILM DEPOSITION BY PECVD

根据沉积非晶硅薄膜的实际PECVD反应室结构建立其几何模型,并在考虑反应室中表面化学反应的条件下建立三维热流场数值分析模型。据此对非晶硅沉积过程进行模拟,得到薄膜沉积过程中化学组分的分布情况以及薄膜的平均沉积速率。通过正交试验法对非晶硅薄膜沉积的工艺参数进行数值模拟分析,得出影响沉积速率的工艺参数的主次顺序;并经过实验验证,模拟结果与实验结果具有一致性。数值模拟可加深对工艺过程的理解,为合理确定PECVD工艺参数提供理论基础。

A three-dimensional numerical model with consideration of fluid, temperature and surface reaction was established for a-Si：H thin film deposition according to the actual structure of PECVD. The deposition process of a-Si：H film deposition was simulated allording to the model, the distribution of main chemical elements and average deposition rate were obtained. The orthogonal experimental method was applied to numerical simulation of process parameters for a-Si： H thin film deposited by PECVD. The order of major process parameters affecting deposition rate was found. The experimental verification was also carried out, the simulation results were well coincided with experimental results. The numerical simulation can provide theoretical basis for determining processing parameters of PECVD reasonably, and give a deeper understanding processing optimizations of thin film deposition by PECVD.